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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package *High voltage *Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: *Fluorescent lamp ballasts *Inverters *Solenoid and relay drivers *Motor controls *Deflection circuits PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJE12007 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 750 9 2.5 5 80 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IC=1A ;IB=0.5A IC=2A ;IB=1A IC=1A ;IB=0.5A IC=2A ;IB=1A VCEV=RatedValue; VBE(off)=-1.5V TC=100 VEB=9V; IC=0 IC=1A ; VCE=5V IC=2A ; VCE=5V 3 2.5 MIN 750 MJE12007 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEV IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.0 2.5 1.5 2.8 0.25 2.5 0.25 V V V V mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE12007 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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